西(xi)(xi)(xi)(xi)安(an)紫(zi)(zi)光(guang)(guang)國(guo)(guo)芯(xin)(xin)半(ban)導(dao)體股(gu)份有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)前身為(wei)成(cheng)立(li)于2004年(nian)德國(guo)(guo)英飛凌西(xi)(xi)(xi)(xi)安(an)研(yan)發(fa)中心的存儲事(shi)業部,2006年(nian)分拆成(cheng)為(wei)獨立(li)的奇夢(meng)達科技(ji)西(xi)(xi)(xi)(xi)安(an)有(you)(you)(you)限公(gong)(gong)司(si)(si)(si),2009年(nian)被(bei)浪潮(chao)集(ji)團收購(gou)轉制成(cheng)為(wei)國(guo)(guo)內(nei)公(gong)(gong)司(si)(si)(si)并(bing)更(geng)名(ming)為(wei)西(xi)(xi)(xi)(xi)安(an)華芯(xin)(xin)半(ban)導(dao)體有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)。2015年(nian),紫(zi)(zi)光(guang)(guang)集(ji)團紫(zi)(zi)光(guang)(guang)國(guo)(guo)芯(xin)(xin)微電子(zi)股(gu)份有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)收購(gou)西(xi)(xi)(xi)(xi)安(an)華芯(xin)(xin)半(ban)導(dao)體有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)并(bing)更(geng)名(ming)為(wei)西(xi)(xi)(xi)(xi)安(an)紫(zi)(zi)光(guang)(guang)國(guo)(guo)芯(xin)(xin)半(ban)導(dao)體有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)。2019年(nian)12月(yue),經過重(zhong)組,西(xi)(xi)(xi)(xi)安(an)紫(zi)(zi)光(guang)(guang)國(guo)(guo)芯(xin)(xin)半(ban)導(dao)體并(bing)入(ru)北京紫(zi)(zi)光(guang)(guang)存儲科技(ji)有(you)(you)(you)限公(gong)(gong)司(si)(si)(si)。2022年(nian)紫(zi)(zi)光(guang)(guang)集(ji)團實(shi)控(kong)(kong)人變更(geng)為(wei)智廣芯(xin)(xin)控(kong)(kong)股(gu),隨著紫(zi)(zi)光(guang)(guang)集(ji)團重(zhong)整完(wan)畢,西(xi)(xi)(xi)(xi)安(an)紫(zi)(zi)光(guang)(guang)國(guo)(guo)芯(xin)(xin)踏上發(fa)展新征程。
公(gong)司是以(yi)DRAM(動態隨機(ji)存(cun)取存(cun)儲器(qi)(qi))存(cun)儲技術(shu)為核(he)心的產(chan)(chan)(chan)品和服務提供商,核(he)心業(ye)務包括(kuo)存(cun)儲器(qi)(qi)設計(ji)開(kai)(kai)發,存(cun)儲器(qi)(qi)產(chan)(chan)(chan)品量產(chan)(chan)(chan)銷售,以(yi)及專用集成電路設計(ji)開(kai)(kai)發服務,產(chan)(chan)(chan)品包括(kuo)DRAMKGD、DRAM顆粒、DRAM模組、系(xi)統產(chan)(chan)(chan)品和設計(ji)服務。目前公(gong)司員工(gong)人(ren)數超過600名(ming),其中研(yan)發工(gong)程(cheng)師占比80%以(yi)上,70%擁(yong)有(you)碩士或(huo)博士學位。公(gong)司還(huan)擁(yong)有(you)二(er)十余位外籍專家(jia)和海外留(liu)學歸國人(ren)員。
公(gong)司(si)多年來(lai)一直專(zhuan)注(zhu)于存儲器(qi)(qi)尤(you)其是DRAM存儲器(qi)(qi)的研發(fa)和(he)技(ji)(ji)術(shu)積(ji)累(lei),擁有從產(chan)(chan)品(pin)(pin)立項、指標定義、電(dian)路設計、版圖設計到硅片(pian)(pian)、顆粒、內存條(tiao)測試及(ji)售前售后技(ji)(ji)術(shu)支持等全(quan)方面技(ji)(ji)術(shu)積(ji)累(lei)。二十余款芯片(pian)(pian)產(chan)(chan)品(pin)(pin)和(he)四(si)十余款模組產(chan)(chan)品(pin)(pin)實現(xian)全(quan)球量產(chan)(chan)和(he)銷售。產(chan)(chan)品(pin)(pin)廣泛(fan)應用于計算機、服務(wu)器(qi)(qi)、移動通訊、消(xiao)費電(dian)子及(ji)工業(ye)應用等領域。在面向大數據(ju)和(he)人工智能等新興領域,公(gong)司(si)采(cai)用三維集(ji)成(cheng)技(ji)(ji)術(shu),實現(xian)將邏輯晶圓(yuan)和(he)DRAM晶圓(yuan)的異(yi)質(zhi)集(ji)成(cheng),開(kai)(kai)發(fa)出高(gao)帶(dai)寬、大容量的3DDRAM芯片(pian)(pian),及(ji)內嵌超高(gao)帶(dai)寬超低(di)功耗(hao)DRAM的人工智能(AI)芯片(pian)(pian)。公(gong)司(si)還在NANDFlash、NORFlash和(he)新型存儲器(qi)(qi)RRAM等領域開(kai)(kai)發(fa)有產(chan)(chan)品(pin)(pin),進行(xing)了研發(fa)布(bu)局。
西安(an)紫光(guang)國芯同時還擁有(you)數(shu)字電路(lu)和(he)混合(he)(he)電路(lu)設(she)(she)計(ji)(ji)(ji)團隊(dui),提(ti)供(gong)基于(yu)世界優秀工(gong)藝的(de)ASIC設(she)(she)計(ji)(ji)(ji)開(kai)發驗(yan)證服務。公(gong)(gong)司具(ju)備從(cong)(cong)設(she)(she)計(ji)(ji)(ji)規(gui)格到(dao)芯片(pian)(pian)(pian)(pian)(pian)流片(pian)(pian)(pian)(pian)(pian)完整(zheng)流程(cheng)的(de)設(she)(she)計(ji)(ji)(ji)開(kai)發經驗(yan),包括:設(she)(she)計(ji)(ji)(ji)實現、功能驗(yan)證、綜合(he)(he)和(he)DFT、物理實現、時序、物理檢(jian)查及流片(pian)(pian)(pian)(pian)(pian)。公(gong)(gong)司在(zai)過(guo)去幾年中成功為客戶完成了十(shi)余款基于(yu)65nm/40nm/28nm/14nm/10nm/7nm/5nm,和(he)目前精良的(de)4nm工(gong)藝的(de)SoC芯片(pian)(pian)(pian)(pian)(pian)設(she)(she)計(ji)(ji)(ji)和(he)流片(pian)(pian)(pian)(pian)(pian),幫(bang)助客戶完成芯片(pian)(pian)(pian)(pian)(pian)設(she)(she)計(ji)(ji)(ji)和(he)測(ce)試(shi)。公(gong)(gong)司也成功提(ti)供(gong)多款從(cong)(cong)產品定義開(kai)始完成芯片(pian)(pian)(pian)(pian)(pian)架構設(she)(she)計(ji)(ji)(ji)、電路(lu)設(she)(she)計(ji)(ji)(ji)、仿真驗(yan)證、后端設(she)(she)計(ji)(ji)(ji)、流片(pian)(pian)(pian)(pian)(pian)、測(ce)試(shi)驗(yan)證、量產工(gong)程(cheng)全流程(cheng)的(de)“交鑰匙”芯片(pian)(pian)(pian)(pian)(pian)開(kai)發服務。
公(gong)司是“國(guo)(guo)家(jia)高新技術企(qi)業”、“國(guo)(guo)家(jia)企(qi)業技術中心(xin)(xin)”、“國(guo)(guo)家(jia)知識產(chan)權優勢(shi)企(qi)業”、“西安市存儲器工(gong)程技術研究中心(xin)(xin)”,公(gong)司建(jian)設有占(zhan)地面(mian)積2000余(yu)平(ping)米的世界前列(lie)水平(ping)的存儲器芯(xin)片測(ce)試(shi)(shi)、模組測(ce)試(shi)(shi)、模組應用和(he)(he)(he)ASIC測(ce)試(shi)(shi)實驗(yan)室4個,大型(xing)成套測(ce)試(shi)(shi)設備30余(yu)臺(tai)套。可支持各類存儲器和(he)(he)(he)ASIC產(chan)品的功能和(he)(he)(he)性能測(ce)試(shi)(shi)驗(yan)證(zheng)分析、量(liang)產(chan)測(ce)試(shi)(shi)工(gong)程開發、應用工(gong)程測(ce)試(shi)(shi)、以及小批量(liang)生產(chan)和(he)(he)(he)工(gong)程樣品開發。
標準號 | 標準名稱 | 發布日期 | 實施日期 | 標準詳情 |
GB/T 36474-2018 | 半導體集成電路 第三代雙倍數據速率同步動態隨機存儲器 (DDR3 SDRAM)測試方法 | 2019-06-07 | 2020-01-01 |