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光(guang)(guang)伏(fu)發電(dian)(dian)(dian)是(shi)利用半導體(ti)界面的光(guang)(guang)生伏(fu)特效(xiao)應(ying)而將光(guang)(guang)能(neng)(neng)直(zhi)接轉(zhuan)變(bian)為(wei)電(dian)(dian)(dian)能(neng)(neng)的一種技術。主要(yao)(yao)由太(tai)陽電(dian)(dian)(dian)池(chi)板（組(zu)件）、控制(zhi)器(qi)和(he)逆變(bian)器(qi)三大部(bu)分組(zu)成(cheng)，主要(yao)(yao)部(bu)件由電(dian)(dian)(dian)子元(yuan)器(qi)件構成(cheng)。太(tai)陽能(neng)(neng)電(dian)(dian)(dian)池(chi)經(jing)過串聯后進(jin)行封(feng)裝(zhuang)保護可形(xing)(xing)成(cheng)大面積的太(tai)陽電(dian)(dian)(dian)池(chi)組(zu)件，再配合上(shang)功率控制(zhi)器(qi)等部(bu)件就(jiu)形(xing)(xing)成(cheng)了(le)光(guang)(guang)伏(fu)發電(dian)(dian)(dian)裝(zhuang)置。

光伏發電(dian)(dian)的(de)主要(yao)原(yuan)(yuan)(yuan)(yuan)理是(shi)半導(dao)體的(de)光電(dian)(dian)效應。光子(zi)(zi)(zi)(zi)(zi)照射到金屬上時，它的(de)能(neng)量可以被(bei)金屬中某個(ge)電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)全部吸收，電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)吸收的(de)能(neng)量足夠(gou)大(da)，能(neng)克服金屬內部引(yin)力(li)做(zuo)功，離開金屬表面(mian)逃逸(yi)出來(lai)，成(cheng)為光電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)。硅原(yuan)(yuan)(yuan)(yuan)子(zi)(zi)(zi)(zi)(zi)有4個(ge)外(wai)層電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)，如(ru)果在(zai)純硅中摻(chan)入(ru)有5個(ge)外(wai)層電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)的(de)原(yuan)(yuan)(yuan)(yuan)子(zi)(zi)(zi)(zi)(zi)如(ru)磷原(yuan)(yuan)(yuan)(yuan)子(zi)(zi)(zi)(zi)(zi)，就成(cheng)為N型(xing)(xing)半導(dao)體；若在(zai)純硅中摻(chan)入(ru)有3個(ge)外(wai)層電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)的(de)原(yuan)(yuan)(yuan)(yuan)子(zi)(zi)(zi)(zi)(zi)如(ru)硼原(yuan)(yuan)(yuan)(yuan)子(zi)(zi)(zi)(zi)(zi)，形成(cheng)P型(xing)(xing)半導(dao)體。當P型(xing)(xing)和N型(xing)(xing)結合在(zai)一起(qi)時，接觸面(mian)就會形成(cheng)電(dian)(dian)勢差，成(cheng)為太(tai)陽(yang)能(neng)電(dian)(dian)池。當太(tai)陽(yang)光照射到P-N結后(hou)，空穴(xue)由P極(ji)區(qu)往N極(ji)區(qu)移(yi)動，電(dian)(dian)子(zi)(zi)(zi)(zi)(zi)由N極(ji)區(qu)向P極(ji)區(qu)移(yi)動，形成(cheng)電(dian)(dian)流(liu)。

光(guang)(guang)電效(xiao)應就是光(guang)(guang)照使不均勻(yun)半(ban)導體(ti)或(huo)半(ban)導體(ti)與(yu)金屬結(jie)合的不同部位之間產生電位差的現象。它首(shou)先是由光(guang)(guang)子(光(guang)(guang)波(bo))轉化為(wei)電子、光(guang)(guang)能量轉化為(wei)電能量的過程；其次(ci)，是形成(cheng)電壓過程。

多晶硅(gui)經過鑄錠、破(po)錠、切片(pian)(pian)等程序后，制(zhi)(zhi)作成(cheng)待加工(gong)的硅(gui)片(pian)(pian)。在硅(gui)片(pian)(pian)上摻雜和擴(kuo)散微量的硼、磷(lin)等，就(jiu)(jiu)形成(cheng)P－N結(jie)。然(ran)后采(cai)用絲網印刷(shua)，將精配好的銀漿(jiang)印在硅(gui)片(pian)(pian)上做成(cheng)柵(zha)線，經過燒結(jie)，同時制(zhi)(zhi)成(cheng)背電(dian)(dian)(dian)極，并在有柵(zha)線的面涂(tu)一層(ceng)防反(fan)射(she)涂(tu)層(ceng)，電(dian)(dian)(dian)池(chi)片(pian)(pian)就(jiu)(jiu)至此制(zhi)(zhi)成(cheng)。電(dian)(dian)(dian)池(chi)片(pian)(pian)排列(lie)組合成(cheng)電(dian)(dian)(dian)池(chi)組件，就(jiu)(jiu)組成(cheng)了(le)大的電(dian)(dian)(dian)路板。一般(ban)在組件四周包(bao)鋁(lv)框，正(zheng)面覆蓋玻璃，反(fan)面安(an)裝(zhuang)電(dian)(dian)(dian)極。有了(le)電(dian)(dian)(dian)池(chi)組件和其他輔(fu)助設備(bei)，就(jiu)(jiu)可(ke)(ke)以組成(cheng)發(fa)電(dian)(dian)(dian)系統。為了(le)將直流(liu)電(dian)(dian)(dian)轉(zhuan)化(hua)交流(liu)電(dian)(dian)(dian)，需(xu)要安(an)裝(zhuang)電(dian)(dian)(dian)流(liu)轉(zhuan)換器(qi)。發(fa)電(dian)(dian)(dian)后可(ke)(ke)用蓄電(dian)(dian)(dian)池(chi)存(cun)儲，也可(ke)(ke)輸入公共電(dian)(dian)(dian)網。發(fa)電(dian)(dian)(dian)系統成(cheng)本中，電(dian)(dian)(dian)池(chi)組件約占50%，電(dian)(dian)(dian)流(liu)轉(zhuan)換器(qi)、安(an)裝(zhuang)費、其他輔(fu)助部件以及(ji)其他費用占另外50%。

無論從(cong)世(shi)界(jie)還是(shi)(shi)從(cong)中國來看，常規(gui)能(neng)源(yuan)都(dou)是(shi)(shi)很有(you)限的(de)。中國的(de)一次能(neng)源(yuan)儲(chu)量遠遠低于世(shi)界(jie)的(de)平(ping)均(jun)水平(ping)，大約只有(you)世(shi)界(jie)總儲(chu)量的(de)10%。太(tai)陽能(neng)是(shi)(shi)人類取(qu)之(zhi)(zhi)不盡用之(zhi)(zhi)不竭的(de)可再生能(neng)源(yuan)，具(ju)有(you)充分的(de)清潔性(xing)(xing)、絕對的(de)安(an)全(quan)性(xing)(xing)、相對的(de)廣(guang)泛性(xing)(xing)、確實的(de)長壽命和免維(wei)護(hu)性(xing)(xing)、資源(yuan)的(de)充足性(xing)(xing)及潛在的(de)經濟性(xing)(xing)等優點(dian)，在能(neng)源(yuan)戰略中具(ju)有(you)重要地(di)位。