一、igbt模塊損壞的原因有哪些

IGBT模塊是能源變換與傳輸的核心器件，在軌道交通、智能電網、航空航天、電動汽車等領域有著廣泛的應用。在使用過程中，IGBT模塊受到(dao)容性或感性負載的沖擊，可(ke)能導致模(mo)塊(kuai)損(sun)壞，一般igbt模(mo)塊(kuai)損(sun)壞的原因(yin)主要有：

1、過電流損壞

（1）鎖定效應

IGBT為復合器件， 其(qi)內有一(yi)個寄(ji)生(sheng)(sheng)晶(jing)閘管，在規定的(de)漏極(ji)電流范圍(wei)內，NPN的(de)正(zheng)偏(pian)壓不足(zu)以使NPN晶(jing)體(ti)管導通(tong)，當(dang)漏極(ji)電流大到一(yi)定程度(du)時， 這個正(zheng)偏(pian)壓足(zu)以使NPN晶(jing)體(ti)管開通(tong)，進而使NPN或PNP晶(jing)體(ti)管處于飽和狀態，于是寄(ji)生(sheng)(sheng)晶(jing)閘管開通(tong)，柵極(ji)失去了控制作用(yong)，便(bian)發生(sheng)(sheng)了鎖(suo)定效(xiao)應。IGBT發生(sheng)(sheng)鎖(suo)定效(xiao)應后，集電極(ji)電流過大，造成了過高的(de)功耗而導致(zhi)器件損壞。

（2）長時間過流運行

IGBT模塊長時間(jian)過流(liu)運行是指IGBT的(de)運行指標達到或超(chao)出RBSOA（反偏安(an)(an)全工(gong)作(zuo)區）所(suo)限定(ding)的(de)電(dian)流(liu)安(an)(an)全邊界（如選型失誤、安(an)(an)全系數偏小等），出現這種情況時，電(dian)路必須能(neng)在(zai)電(dian)流(liu)到達RBSOA限定(ding)邊界前(qian)立即關(guan)斷器件，才能(neng)達到保護器件的(de)目的(de)。

（3）短路超時（>10us）

短(duan)路超時(shi)(shi)是指IGBT所承受(shou)的(de)(de)(de)電(dian)(dian)流值達(da)到或超出SCSOA（短(duan)路安全工作區）所限定(ding)的(de)(de)(de)最大邊界，比如4-5倍額(e)定(ding)電(dian)(dian)流時(shi)(shi)，必(bi)須在10us之內關斷IGBT。如果此時(shi)(shi)IGBT所承受(shou)的(de)(de)(de)最大電(dian)(dian)壓也(ye)超過器件標稱值，IGBT必(bi)須在更短(duan)的(de)(de)(de)時(shi)(shi)間內被(bei)關斷。

2、過電壓損壞和靜電損壞

IGBT在(zai)關斷時，由(you)于逆變電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路中存在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)感成分，關斷瞬間產生尖(jian)峰電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)，如果尖(jian)峰電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)超過(guo)(guo)IGBT器件(jian)的(de)(de)最高峰值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)，將(jiang)造(zao)成IGBT擊(ji)穿損壞。IGBT過(guo)(guo) 電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)損壞可(ke)分為集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)柵(zha)(zha)極(ji)(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)、柵(zha)(zha)極(ji)(ji)-發射極(ji)(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)、高du/dt過(guo)(guo)壓(ya)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)等(deng)。大(da)多數過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)保護(hu)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路設計(ji)(ji)都比較完善，但是對于由(you)高du/dt所導致的(de)(de)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)故障，基本上(shang)都是采用(yong)無感電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容或(huo)者RCD結構吸收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路。由(you)于吸收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路設計(ji)(ji)的(de)(de)吸收(shou)容量不(bu)夠而造(zao)成IGBT損壞，對此可(ke)采用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)鉗(qian)位，往往在(zai)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)-柵(zha)(zha)極(ji)(ji)兩端并接(jie)齊(qi)納二(er)極(ji)(ji)管，采用(yong)柵(zha)(zha)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)動態(tai)控制(zhi)，當(dang)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)瞬間超過(guo)(guo)齊(qi)納二(er)極(ji)(ji)管的(de)(de)鉗(qian)位電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)時，超出(chu)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)將(jiang)疊加在(zai)柵(zha)(zha)極(ji)(ji)上(shang)（米勒效應(ying)起作用(yong)），避免了IGBT因(yin)受集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發射極(ji)(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)而損壞。

采(cai)用(yong)柵極(ji)(ji)電(dian)(dian)壓(ya)(ya)動態控(kong)制可以解決過高(gao)的(de)(de)(de)(de)(de)(de)du/dt帶(dai)來(lai)的(de)(de)(de)(de)(de)(de)集(ji)電(dian)(dian)極(ji)(ji)發(fa)(fa)(fa)射(she)極(ji)(ji)瞬(shun)間過電(dian)(dian)壓(ya)(ya)問題，但(dan)是(shi)(shi)它的(de)(de)(de)(de)(de)(de)弊端是(shi)(shi)當IGBT處于(yu)感性負載運行時，半橋(qiao)結構(gou)中處于(yu)關(guan)斷(duan)(duan)的(de)(de)(de)(de)(de)(de)IGBT，由于(yu)其反并聯(lian)二極(ji)(ji)管(guan)（續(xu)流(liu)(liu)二極(ji)(ji)管(guan)）的(de)(de)(de)(de)(de)(de)恢(hui)復，其集(ji)電(dian)(dian)極(ji)(ji)發(fa)(fa)(fa)射(she)極(ji)(ji)兩端的(de)(de)(de)(de)(de)(de)電(dian)(dian)壓(ya)(ya)急劇(ju)上(shang)升，從(cong)而承受瞬(shun)間很高(gao)的(de)(de)(de)(de)(de)(de)du/dt。多數情況下，該(gai)du/dt值(zhi)要比(bi)IGBT正常關(guan)斷(duan)(duan)時的(de)(de)(de)(de)(de)(de)集(ji)電(dian)(dian)極(ji)(ji)發(fa)(fa)(fa)射(she)極(ji)(ji)電(dian)(dian)壓(ya)(ya)上(shang)升率高(gao)，由于(yu)米勒電(dian)(dian)容(rong)（ Cres）的(de)(de)(de)(de)(de)(de)存在，該(gai)du/dt值(zhi)將(jiang) 在集(ji)電(dian)(dian)極(ji)(ji)和柵極(ji)(ji)之間產(chan)生一個 瞬(shun)間電(dian)(dian)流(liu)(liu)，流(liu)(liu)向柵極(ji)(ji)驅動電(dian)(dian)路。該(gai)電(dian)(dian)流(liu)(liu)與柵極(ji)(ji)電(dian)(dian)路的(de)(de)(de)(de)(de)(de)阻抗相互作用(yong)，直接導(dao)致(zhi)柵極(ji)(ji)-發(fa)(fa)(fa)射(she)極(ji)(ji)電(dian)(dian)壓(ya)(ya)UGE值(zhi)的(de)(de)(de)(de)(de)(de)升高(gao)，甚至(zhi)超過IGBT的(de)(de)(de)(de)(de)(de)開通門(men)限電(dian)(dian)壓(ya)(ya)VGEth值(zhi)。出現惡劣的(de)(de)(de)(de)(de)(de)情況就是(shi)(shi)使IGBT被誤觸發(fa)(fa)(fa)導(dao)通，導(dao)致(zhi)變(bian)換器(qi)的(de)(de)(de)(de)(de)(de)橋(qiao)臂短(duan)路。

3、過熱損壞

過熱損壞一般指(zhi)使用(yong)中IGBT模塊(kuai)的(de)結溫(wen)正超過晶片的(de)最大溫(wen)度限(xian)(xian)定，目前應用(yong)的(de)IGBT器件還是以Tjmax=150℃的(de)NPT技術(shu)為(wei)主(zhu)流的(de)，為(wei)此在IGBT模塊(kuai)應用(yong)中其結溫(wen)應限(xian)(xian)制(zhi)在該值以下。

4、G-E間開放狀態下外加主電路電壓

在(zai)門(men)極(ji)(ji)(ji)一發射極(ji)(ji)(ji)問開(kai) 放的(de)狀(zhuang)態下外(wai)(wai)加主(zhu)電(dian)(dian)路電(dian)(dian)壓，會使(shi)IGBT自動導(dao)(dao)通，通過(guo)過(guo)大的(de)電(dian)(dian)流，使(shi)器件(jian)(jian)損(sun)壞(huai)（這種(zhong)現(xian)象是(shi)由(you)于(yu)G-E間(jian)在(zai)開(kai)放狀(zhuang)下，外(wai)(wai)加主(zhu)電(dian)(dian)壓，通過(guo)IGBT的(de)反(fan)向傳輸電(dian)(dian)容(rong)Cres給門(men)極(ji)(ji)(ji)-發射極(ji)(ji)(ji)間(jian)的(de)電(dian)(dian)毒充電(dian)(dian)，使(shi)IGBT導(dao)(dao)通而(er)產(chan)生的(de)）。在(zai)IGBT器件(jian)(jian)試驗時(shi)，通過(guo)旋(xuan)轉開(kai)關(guan)等機械(xie)開(kai)關(guan)進(jin)行信號線的(de)切換(huan)(huan)，由(you)于(yu)切換(huan)(huan)時(shi)G_E間(jian)瞬間(jian)變(bian)為(wei)(wei)開(kai)放狀(zhuang)態，可能產(chan)生上述現(xian)象而(er)損(sun)壞(huai)IGBT器件(jian)(jian)。另外(wai)(wai)，在(zai)機械(xie)開(kai)關(guan)出現(xian)振(zhen)動的(de)情況下，也存在(zai)同樣的(de)時(shi)間(jian)段，可能損(sun)壞(huai)元(yuan)件(jian)(jian)。為(wei)(wei)了防止這種(zhong)損(sun)壞(huai)，必須先將主(zhu)電(dian)(dian)路（C-E間(jian)）的(de)電(dian)(dian)壓放電(dian)(dian)至0V,再(zai)進(jin)行門(men)極(ji)(ji)(ji)信號的(de)切換(huan)(huan)。另外(wai)(wai)，對(dui)由(you)多個IGBT器件(jian)(jian)（一組2個以上）構成的(de)裝(zhuang)置(zhi)在(zai)進(jin)行試驗等特(te)性試驗時(shi)，測試IGBT器件(jian)(jian)以外(wai)(wai)的(de)門(men)極(ji)(ji)(ji)一發射極(ji)(ji)(ji)間(jian)必須予以短路。

5、機械應力對產品的破壞

IGBT器(qi)件的端子(zi)如果(guo)(guo)受到強外力或振動(dong)，就會產生(sheng)應力，有時(shi)會導致損壞IGBT器(qi)件內部電氣(qi)配線等(deng)(deng)情況(kuang)。在將(jiang)IGBT器(qi)件實(shi)際(ji)安裝(zhuang)(zhuang)到裝(zhuang)(zhuang)置上時(shi)，應避(bi)免發(fa)(fa)生(sheng)類(lei)似的應力。如果(guo)(guo)不(bu)固(gu)定門(men)極驅(qu)動(dong)用的印刷(shua)基板即安裝(zhuang)(zhuang)時(shi)，裝(zhuang)(zhuang)置在搬運(yun)時(shi)由于受到振動(dong)等(deng)(deng)原因，門(men)極驅(qu)動(dong)用的印刷(shua)基板也振動(dong)，從而使IGBT器(qi)件的端子(zi)發(fa)(fa)生(sheng)應力，引起IGBT器(qi)件內部電氣(qi)配線的損壞等(deng)(deng)問題。為了防(fang)止這種不(bu)良情況(kuang)的發(fa)(fa)生(sheng)，需要將(jiang)門(men)極驅(qu)動(dong)用的印刷(shua)基板固(gu)定。

二、igbt模塊怎么測量好壞

判斷IGBT模塊是(shi)否(fou)損壞，一(yi)般需(xu)要(yao)先對其進行檢測(ce)，igbt模塊的檢測(ce)一(yi)般分(fen)為兩(liang)部分(fen)：

1、判斷極性

首先將(jiang)萬(wan)用表(biao)(biao)撥在R×1KΩ擋，用萬(wan)用表(biao)(biao)測(ce)量時，若某一(yi)極(ji)(ji)(ji)(ji)與其(qi)(qi)它兩極(ji)(ji)(ji)(ji)阻值為(wei)(wei)無(wu)窮(qiong)大，調換(huan)表(biao)(biao)筆(bi)后該極(ji)(ji)(ji)(ji)與其(qi)(qi)它兩極(ji)(ji)(ji)(ji)的(de)阻值仍為(wei)(wei)無(wu)窮(qiong)大，則(ze)判(pan)斷此極(ji)(ji)(ji)(ji)為(wei)(wei)柵極(ji)(ji)(ji)(ji)（G），其(qi)(qi)余兩極(ji)(ji)(ji)(ji)再用萬(wan)用表(biao)(biao)測(ce)量，若測(ce)得阻值為(wei)(wei)無(wu)窮(qiong)大，調換(huan)表(biao)(biao)筆(bi)后測(ce)量阻值較(jiao)(jiao)小(xiao)。在測(ce)量阻值較(jiao)(jiao)小(xiao)的(de)一(yi)次中，則(ze)判(pan)斷紅表(biao)(biao)筆(bi)接的(de)為(wei)(wei)集電極(ji)(ji)(ji)(ji)（C）；黑表(biao)(biao)筆(bi)接地為(wei)(wei)發射極(ji)(ji)(ji)(ji)（E）。

2、判斷好壞

將萬用(yong)表(biao)撥(bo)在(zai)(zai)R×10KΩ擋，用(yong)黑(hei)表(biao)筆接IGBT的集電(dian)極(ji)(ji)（C），紅表(biao)筆接IGBT 的發(fa)(fa)射極(ji)(ji)（E），此時(shi)萬用(yong)表(biao)的指(zhi)(zhi)(zhi)針在(zai)(zai)零位(wei)。用(yong)手(shou)指(zhi)(zhi)(zhi)同(tong)時(shi)觸及一(yi)下(xia)(xia)柵極(ji)(ji)（G）和集電(dian)極(ji)(ji)（C），這時(shi)IGBT被觸發(fa)(fa)導通(tong)，萬用(yong)表(biao)的指(zhi)(zhi)(zhi)針擺向阻值較小的方向，并能站(zhan)住指(zhi)(zhi)(zhi)示(shi)在(zai)(zai)某(mou)一(yi)位(wei)置。然后再用(yong)手(shou)指(zhi)(zhi)(zhi)同(tong)時(shi)觸及一(yi)下(xia)(xia)柵極(ji)(ji)（G）和發(fa)(fa)射極(ji)(ji)（E），這時(shi)IGBT被阻斷，萬用(yong)表(biao)的指(zhi)(zhi)(zhi)針回零。此時(shi)即可判(pan)斷IGBT是好的。

三、IGBT模塊檢測注意事項

任何指針式萬(wan)用(yong)(yong)表(biao)(biao)皆(jie)可(ke)用(yong)(yong)于檢測(ce)IGBT。注意判斷IGBT好(hao)壞時，一(yi)定要(yao)將萬(wan)用(yong)(yong)表(biao)(biao)撥在R×10KΩ擋，因(yin)R×1KΩ擋以下(xia)各檔萬(wan)用(yong)(yong)表(biao)(biao)內部電(dian)池電(dian)壓(ya)太低，檢測(ce)好(hao)壞時不(bu)能使IGBT導通，而無法判斷IGBT的好(hao)壞。