一、igbt模塊損壞的原因有哪些

IGBT模塊是能源變換與傳輸的核心器件，在軌道交通、智能電網、航空航天、電動汽車等領域有著廣泛的應用。在使用過程中，IGBT模塊受到容性或感性負(fu)載的(de)沖擊(ji)，可能導(dao)致(zhi)模塊損壞，一(yi)般(ban)igbt模塊損壞的(de)原因主要有：

1、過電流損壞

（1）鎖定效應

IGBT為復(fu)合器(qi)件(jian)， 其內有一個(ge)寄生(sheng)晶(jing)(jing)(jing)閘管(guan)，在規定(ding)(ding)的漏極電(dian)流范圍內，NPN的正偏(pian)壓不足(zu)以使(shi)(shi)NPN晶(jing)(jing)(jing)體管(guan)導(dao)通(tong)，當(dang)漏極電(dian)流大到一定(ding)(ding)程度時(shi)， 這個(ge)正偏(pian)壓足(zu)以使(shi)(shi)NPN晶(jing)(jing)(jing)體管(guan)開(kai)(kai)通(tong)，進而使(shi)(shi)NPN或PNP晶(jing)(jing)(jing)體管(guan)處于(yu)飽和(he)狀態(tai)，于(yu)是(shi)寄生(sheng)晶(jing)(jing)(jing)閘管(guan)開(kai)(kai)通(tong)，柵極失去了(le)控制作用(yong)，便(bian)發生(sheng)了(le)鎖定(ding)(ding)效應(ying)。IGBT發生(sheng)鎖定(ding)(ding)效應(ying)后，集(ji)電(dian)極電(dian)流過大，造成了(le)過高的功(gong)耗而導(dao)致器(qi)件(jian)損(sun)壞。

（2）長時間過流運行

IGBT模(mo)塊長時間過(guo)流運行是(shi)指(zhi)IGBT的(de)運行指(zhi)標達到或超出RBSOA（反(fan)偏安全(quan)工(gong)作區）所限(xian)定的(de)電(dian)流安全(quan)邊界(jie)(jie)（如選型失(shi)誤、安全(quan)系數偏小等），出現這種(zhong)情況時，電(dian)路必須(xu)能在電(dian)流到達RBSOA限(xian)定邊界(jie)(jie)前立即關斷器(qi)件(jian)，才能達到保護器(qi)件(jian)的(de)目(mu)的(de)。

（3）短路超時（>10us）

短路超時(shi)是指IGBT所(suo)承(cheng)受的電流(liu)值達到或超出SCSOA（短路安全工作區）所(suo)限定的最大邊(bian)界，比如4-5倍(bei)額定電流(liu)時(shi)，必(bi)須(xu)在(zai)10us之內關(guan)斷IGBT。如果此時(shi)IGBT所(suo)承(cheng)受的最大電壓也(ye)超過器件標(biao)稱值，IGBT必(bi)須(xu)在(zai)更短的時(shi)間內被(bei)關(guan)斷。

2、過電壓損壞和靜電損壞

IGBT在關斷(duan)時，由(you)(you)于逆變電(dian)(dian)(dian)(dian)路(lu)中(zhong)存在電(dian)(dian)(dian)(dian)感成分，關斷(duan)瞬(shun)間(jian)產(chan)生(sheng)尖峰電(dian)(dian)(dian)(dian)壓(ya)(ya)，如果尖峰電(dian)(dian)(dian)(dian)壓(ya)(ya)超過(guo)(guo)(guo)IGBT器件的(de)最高(gao)峰值電(dian)(dian)(dian)(dian)壓(ya)(ya)，將(jiang)造成IGBT擊穿損壞(huai)。IGBT過(guo)(guo)(guo) 電(dian)(dian)(dian)(dian)壓(ya)(ya)損壞(huai)可分為(wei)集(ji)(ji)(ji)電(dian)(dian)(dian)(dian)極(ji)柵極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)、柵極(ji)-發射極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)、高(gao)du/dt過(guo)(guo)(guo)壓(ya)(ya)電(dian)(dian)(dian)(dian)等。大多數過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)保護的(de)電(dian)(dian)(dian)(dian)路(lu)設計(ji)都(dou)(dou)比較完善，但是對于由(you)(you)高(gao)du/dt所導(dao)致的(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)故障，基本上(shang)都(dou)(dou)是采(cai)用(yong)(yong)無感電(dian)(dian)(dian)(dian)容或者RCD結構吸(xi)收電(dian)(dian)(dian)(dian)路(lu)。由(you)(you)于吸(xi)收電(dian)(dian)(dian)(dian)路(lu)設計(ji)的(de)吸(xi)收容量不夠而造成IGBT損壞(huai)，對此可采(cai)用(yong)(yong)電(dian)(dian)(dian)(dian)壓(ya)(ya)鉗位，往往在集(ji)(ji)(ji)電(dian)(dian)(dian)(dian)極(ji)-柵極(ji)兩(liang)端并接齊(qi)納二(er)極(ji)管，采(cai)用(yong)(yong)柵極(ji)電(dian)(dian)(dian)(dian)壓(ya)(ya)動態控制，當(dang)集(ji)(ji)(ji)電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)壓(ya)(ya)瞬(shun)間(jian)超過(guo)(guo)(guo)齊(qi)納二(er)極(ji)管的(de)鉗位電(dian)(dian)(dian)(dian)壓(ya)(ya)時，超出(chu)的(de)電(dian)(dian)(dian)(dian)壓(ya)(ya)將(jiang)疊加在柵極(ji)上(shang)（米勒效應起作用(yong)(yong)），避免(mian)了IGBT因受集(ji)(ji)(ji)電(dian)(dian)(dian)(dian)極(ji)發射極(ji)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)而損壞(huai)。

采用(yong)柵極(ji)電(dian)(dian)(dian)(dian)壓(ya)(ya)動(dong)態控(kong)制可以解決過(guo)高(gao)的(de)(de)(de)du/dt帶來的(de)(de)(de)集(ji)電(dian)(dian)(dian)(dian)極(ji)發(fa)(fa)射(she)極(ji)瞬間(jian)(jian)過(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)問題(ti)，但是它的(de)(de)(de)弊端(duan)是當(dang)IGBT處于(yu)感性負載運行(xing)時(shi)，半(ban)橋結構中處于(yu)關(guan)(guan)斷的(de)(de)(de)IGBT，由(you)(you)于(yu)其反并聯二極(ji)管(guan)（續流二極(ji)管(guan)）的(de)(de)(de)恢(hui)復(fu)，其集(ji)電(dian)(dian)(dian)(dian)極(ji)發(fa)(fa)射(she)極(ji)兩端(duan)的(de)(de)(de)電(dian)(dian)(dian)(dian)壓(ya)(ya)急(ji)劇上(shang)升(sheng)，從(cong)而(er)承(cheng)受瞬間(jian)(jian)很(hen)高(gao)的(de)(de)(de)du/dt。多數情況下，該(gai)(gai)du/dt值(zhi)(zhi)要比IGBT正常關(guan)(guan)斷時(shi)的(de)(de)(de)集(ji)電(dian)(dian)(dian)(dian)極(ji)發(fa)(fa)射(she)極(ji)電(dian)(dian)(dian)(dian)壓(ya)(ya)上(shang)升(sheng)率高(gao)，由(you)(you)于(yu)米勒電(dian)(dian)(dian)(dian)容（ Cres）的(de)(de)(de)存在，該(gai)(gai)du/dt值(zhi)(zhi)將 在集(ji)電(dian)(dian)(dian)(dian)極(ji)和柵極(ji)之間(jian)(jian)產生一個(ge) 瞬間(jian)(jian)電(dian)(dian)(dian)(dian)流，流向柵極(ji)驅動(dong)電(dian)(dian)(dian)(dian)路(lu)(lu)。該(gai)(gai)電(dian)(dian)(dian)(dian)流與柵極(ji)電(dian)(dian)(dian)(dian)路(lu)(lu)的(de)(de)(de)阻抗相互作用(yong)，直接導致柵極(ji)-發(fa)(fa)射(she)極(ji)電(dian)(dian)(dian)(dian)壓(ya)(ya)UGE值(zhi)(zhi)的(de)(de)(de)升(sheng)高(gao)，甚至超(chao)過(guo)IGBT的(de)(de)(de)開通(tong)門限電(dian)(dian)(dian)(dian)壓(ya)(ya)VGEth值(zhi)(zhi)。出現惡劣的(de)(de)(de)情況就是使IGBT被誤(wu)觸發(fa)(fa)導通(tong)，導致變換器的(de)(de)(de)橋臂短路(lu)(lu)。

3、過熱損壞

過(guo)熱損壞一(yi)般指(zhi)使用(yong)中IGBT模塊的(de)結(jie)溫正超過(guo)晶片的(de)最(zui)大溫度限定，目前(qian)應(ying)用(yong)的(de)IGBT器件(jian)還是以(yi)Tjmax=150℃的(de)NPT技術為(wei)主(zhu)流的(de)，為(wei)此在IGBT模塊應(ying)用(yong)中其結(jie)溫應(ying)限制在該值(zhi)以(yi)下(xia)。

4、G-E間開放狀態下外加主電路電壓

在(zai)門極(ji)(ji)一(yi)發射極(ji)(ji)問開(kai)(kai)(kai) 放的(de)(de)(de)(de)(de)(de)狀(zhuang)態下外加(jia)主電(dian)(dian)(dian)路電(dian)(dian)(dian)壓，會使IGBT自動導(dao)通(tong)，通(tong)過(guo)過(guo)大的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)流，使器(qi)件損壞(huai)(huai)（這種(zhong)現(xian)象是由于G-E間(jian)在(zai)開(kai)(kai)(kai)放狀(zhuang)下，外加(jia)主電(dian)(dian)(dian)壓，通(tong)過(guo)IGBT的(de)(de)(de)(de)(de)(de)反向傳輸電(dian)(dian)(dian)容Cres給門極(ji)(ji)-發射極(ji)(ji)間(jian)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)毒(du)充電(dian)(dian)(dian)，使IGBT導(dao)通(tong)而產(chan)生的(de)(de)(de)(de)(de)(de)）。在(zai)IGBT器(qi)件試驗(yan)時，通(tong)過(guo)旋轉開(kai)(kai)(kai)關(guan)等(deng)(deng)機(ji)(ji)械(xie)開(kai)(kai)(kai)關(guan)進行信號(hao)線的(de)(de)(de)(de)(de)(de)切(qie)換(huan)，由于切(qie)換(huan)時G_E間(jian)瞬(shun)間(jian)變為開(kai)(kai)(kai)放狀(zhuang)態，可能產(chan)生上述現(xian)象而損壞(huai)(huai)IGBT器(qi)件。另(ling)外，在(zai)機(ji)(ji)械(xie)開(kai)(kai)(kai)關(guan)出現(xian)振動的(de)(de)(de)(de)(de)(de)情(qing)況下，也存在(zai)同樣(yang)的(de)(de)(de)(de)(de)(de)時間(jian)段，可能損壞(huai)(huai)元件。為了防(fang)止這種(zhong)損壞(huai)(huai)，必須(xu)先將主電(dian)(dian)(dian)路（C-E間(jian)）的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)壓放電(dian)(dian)(dian)至0V,再進行門極(ji)(ji)信號(hao)的(de)(de)(de)(de)(de)(de)切(qie)換(huan)。另(ling)外，對(dui)由多個(ge)IGBT器(qi)件（一(yi)組(zu)2個(ge)以上）構成的(de)(de)(de)(de)(de)(de)裝置在(zai)進行試驗(yan)等(deng)(deng)特性試驗(yan)時，測(ce)試IGBT器(qi)件以外的(de)(de)(de)(de)(de)(de)門極(ji)(ji)一(yi)發射極(ji)(ji)間(jian)必須(xu)予以短路。

5、機械應力對產品的破壞

IGBT器件的(de)(de)端子如果(guo)受到(dao)強外力或振(zhen)動，就會產生應力，有(you)時(shi)(shi)會導致損壞(huai)IGBT器件內(nei)部(bu)電(dian)(dian)氣(qi)配線等情況。在(zai)(zai)將(jiang)IGBT器件實際安裝(zhuang)到(dao)裝(zhuang)置上時(shi)(shi)，應避(bi)免發生類似的(de)(de)應力。如果(guo)不(bu)固定(ding)門極驅(qu)動用的(de)(de)印刷(shua)基板(ban)即安裝(zhuang)時(shi)(shi)，裝(zhuang)置在(zai)(zai)搬運時(shi)(shi)由(you)于(yu)受到(dao)振(zhen)動等原(yuan)因，門極驅(qu)動用的(de)(de)印刷(shua)基板(ban)也振(zhen)動，從(cong)而(er)使IGBT器件的(de)(de)端子發生應力，引起IGBT器件內(nei)部(bu)電(dian)(dian)氣(qi)配線的(de)(de)損壞(huai)等問題。為了防止這種不(bu)良情況的(de)(de)發生，需要將(jiang)門極驅(qu)動用的(de)(de)印刷(shua)基板(ban)固定(ding)。

二、igbt模塊怎么測量好壞

判斷(duan)IGBT模塊是(shi)否損壞，一(yi)般(ban)需要先對其進行檢測，igbt模塊的檢測一(yi)般(ban)分為兩部(bu)分：

1、判斷極性

首先將萬用表(biao)(biao)撥在R×1KΩ擋，用萬用表(biao)(biao)測(ce)量(liang)(liang)時，若某一(yi)極(ji)(ji)(ji)與其(qi)它兩極(ji)(ji)(ji)阻(zu)(zu)值(zhi)為(wei)(wei)(wei)(wei)無(wu)窮(qiong)大(da)，調(diao)換表(biao)(biao)筆(bi)后該極(ji)(ji)(ji)與其(qi)它兩極(ji)(ji)(ji)的阻(zu)(zu)值(zhi)仍(reng)為(wei)(wei)(wei)(wei)無(wu)窮(qiong)大(da)，則(ze)判斷(duan)(duan)此極(ji)(ji)(ji)為(wei)(wei)(wei)(wei)柵極(ji)(ji)(ji)（G），其(qi)余兩極(ji)(ji)(ji)再用萬用表(biao)(biao)測(ce)量(liang)(liang)，若測(ce)得阻(zu)(zu)值(zhi)為(wei)(wei)(wei)(wei)無(wu)窮(qiong)大(da)，調(diao)換表(biao)(biao)筆(bi)后測(ce)量(liang)(liang)阻(zu)(zu)值(zhi)較(jiao)小。在測(ce)量(liang)(liang)阻(zu)(zu)值(zhi)較(jiao)小的一(yi)次中，則(ze)判斷(duan)(duan)紅表(biao)(biao)筆(bi)接(jie)的為(wei)(wei)(wei)(wei)集(ji)電極(ji)(ji)(ji)（C）；黑表(biao)(biao)筆(bi)接(jie)地(di)為(wei)(wei)(wei)(wei)發(fa)射極(ji)(ji)(ji)（E）。

2、判斷好壞

將萬用(yong)表(biao)(biao)撥在(zai)(zai)R×10KΩ擋，用(yong)黑表(biao)(biao)筆接(jie)IGBT的(de)集電極（C），紅表(biao)(biao)筆接(jie)IGBT 的(de)發(fa)射極（E），此時萬用(yong)表(biao)(biao)的(de)指(zhi)針在(zai)(zai)零位(wei)。用(yong)手指(zhi)同(tong)時觸及(ji)一下(xia)柵極（G）和集電極（C），這時IGBT被觸發(fa)導通，萬用(yong)表(biao)(biao)的(de)指(zhi)針擺向(xiang)阻值(zhi)較小的(de)方向(xiang)，并能站住指(zhi)示在(zai)(zai)某(mou)一位(wei)置。然(ran)后再用(yong)手指(zhi)同(tong)時觸及(ji)一下(xia)柵極（G）和發(fa)射極（E），這時IGBT被阻斷，萬用(yong)表(biao)(biao)的(de)指(zhi)針回零。此時即可判斷IGBT是好的(de)。

三、IGBT模塊檢測注意事項

任(ren)何指針式萬用(yong)(yong)表皆(jie)可(ke)用(yong)(yong)于檢測IGBT。注(zhu)意判(pan)斷IGBT好(hao)壞時，一定要(yao)將萬用(yong)(yong)表撥在R×10KΩ擋，因(yin)R×1KΩ擋以下各(ge)檔萬用(yong)(yong)表內部電池電壓太低，檢測好(hao)壞時不能使IGBT導通，而無法判(pan)斷IGBT的好(hao)壞。